Since 1992 Astralux has maintained a leadership position driving the science behind key material and device development technologies. Most notibly in the Solar Energy and semiconductors industries.

Key Technology Areas

Wafers for applications in:

• Solar Panel and Solar Energy Devices
  
• Hybrid Devices
  
• Light Emitting Diodes (LEDs) - (LED's are far less energy intensive than conventional lighting technologies)
  
• Ultra-Violet, Blue and Green Lasers
  
• Solar blind UV Detectors and X-ray Detectors
  
• RF Electronics

Emerging Devices

Advanced Silicon technologies for operation in:

• Solar panels
  
• Si / SiC Hybrid Technologies
  
• Advanced semiconductor technologies

Current Projects

We here at Astralux consistently strive to stay on the cutting edge of technology development. We have been awarded numerous government contracts through the DoE, DoD, NASA, and others in many exciting technological areas. Here is a list of past and present fields of interest in our R&D ventures:

• III - V Semiconductors (Namely AlGaN)
  
• Semiconductor Ultraviolet Optical Sources (SUVOS)
  
• UV / X-Ray Biodecontamination
  
• Si / SiC Hybrid Wafer
  
• Direct Thermal to Electric Conversion (DTEC) Systems
  
• CHP and Waste Heat Converters
  
• Thermal Management
  
• Solar Photovoltaics (Solar Energy, Solar Power)
  
• Solar Panels
  
• Building Integrated Photovoltaics (BIPV)
  
• and many more...

Developing Opportunities

Solar Energy technology is approaching a maturing stage, where along with strong State and Government incentives, can provide a widespread solution to the impending energy problems that face our nation and the world.

Developing high-efficiency, yet cost-effective and practical solar energy technology exploring new, more manageable materials such as thin-flims.

Hybrid SiC (silicon carbide) wafer technology that will significantly lower the cost of SiC wafers for device fabrication by more than a factor of five.

SiC hybrid wafers will provide lower cost wafers and enable new device incorporation.

RF transistor technology, based on GaN and SiC materials, that will advance the state of the art (and decrease component cost) of high-frequency power devices.